Seemic non-contact optical metrology characterizes the dimensions and topography of dielectric films, gratings, nanowires and epitaxial or doped structures, through to 3D nano optical storage and advanced packaging TSV. The six cases below are validated measurement tasks with their capability figures.

Case 1: Semiconductor dielectric film thickness

SEM cross-section of a semiconductor dielectric film, 500 nm scale bar
Dielectric film cross-section
Angle-resolved scattering curves, simulation compared with experiment over incidence angles from -64 to +64 degrees
Simulation data compared with experimental data
Film thickness range: 1~500 nm; measurement accuracy: ≤1 nm

Case 2: Grating critical parameters

SEM cross-section of a grating structure, 100 nm scale bar
Grating cross-section
Grating parameters labeled on a schematic: top critical dimension, bottom critical dimension, pitch, height and side wall angle
Critical parameters measured from a grating structure
Grating dimension range: 1-500 nm; measurement accuracy: ≤1 nm

Case 3: Nanowire critical parameters

SEM topography of a nanowire array, 20 um scale bar
Nanowire array topography
Nanowire dimension range: 1~500 nm; measurement accuracy: ≤5 nm

Case 4: Element concentration and dimensions in epitaxy and doping

Four panels showing element distribution and topography of a doped epitaxial structure: Si, topography, Ga and N, 200 nm scale bar
Element distribution and topography of a doped epitaxial structure
Doping concentration accuracy: ≤0.01%; dimension range: 1~500 nm

Case 5: 3D nano optical storage characterization

For high-density 3D optical storage, angle-resolved scattering captures the spectral response of the storage structure; the quantitative link between scattering spectra and structural topography enables optical encoding and decoding of the stored information.

Schematic of a 3D nano optical storage structure with four record layers at depths z1 to z4
Schematic of a 3D nano optical storage structure

Case 6: Advanced packaging TSV topography

Schematic of TSV vertical interconnects inside a stacked advanced package
TSV vertical interconnects in an advanced package
TSV dimension range: Φ ≤10 μm; measurement accuracy: ≤10 nm